The IRF640N is a high-voltage N-channel power MOSFET. It is engineered for applications where the load voltage is significantly higher than standard battery levels, providing reliable switching for circuits up to 200V.
Table of Contents
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IRF640N Pinout (TO-220)
| Pin Number | Terminal Name | Description |
| 1 | Gate (G) | Control terminal for switching signal. |
| 2 | Drain (D) | Connected to the load; shares the metal tab. |
| 3 | Source (S) | Connected to circuit ground. |
Technical Specifications
- Max Drain-Source Voltage (VDS): 200V
- Max Continuous Drain Current (ID): 18A
- Gate Threshold Voltage (VGS(th)): 2.0V to 4.0V
- On-Resistance (RDS(on)): 0.150 Ω
- Total Power Dissipation (PD): 150W
Key Features & Benefits
- High Voltage Rating: Capable of handling 200V breakdown.
- Rugged Design: Excellent for industrial and high-heat environments.
- Dynamic dV/dt: Enhanced reliability during high-speed switching.
Common Applications
- Uninterruptible Power Supplies (UPS).
- High-voltage DC motor drivers.
- AC-DC switching power supplies.
IRF640N Equivalent & Substitutes
- IRF640
- IRFB20N50K
- STF20N20
Related Tutorials on elxhub
- Master Selection: Need help choosing? See our Ultimate MOSFET Selection Guide.
- Signal Shifting: Learn how to bridge logic levels in our Logic Level Shifter Tutorial.
- Basics: Learn more in Transistors – Basics, Types, and Working.
Conclusion
The IRF640N is the go-to MOSFET when project voltages exceed the standard range, offering a balance of high voltage and decent current capacity.
Download the MOSFET Datasheet pdf
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