IRF540N N-Channel 100V Power MOSFET Pinout, Datasheet

The IRF540N is a high-voltage N-channel enhancement mode MOSFET designed for applications that require switching loads up to 100V. It is a rugged power component known for its low thermal resistance and high-speed switching capabilities, making it a preferred choice for heavy DC loads and industrial power supplies.

IRF540N Pinout (TO-220)

Pin NumberTerminal NameDescription
1Gate (G)Control terminal; requires 10V for full saturation.
2Drain (D)Connected to the load; shares the metal tab.
3Source (S)Return path connection to ground (GND).

Technical Specifications

  • Max Drain-Source Voltage (VDS​): 100V
  • Max Continuous Drain Current (ID​): 33A
  • Gate Threshold Voltage (VGS(th)​): 2.0V to 4.0V
  • On-Resistance (RDS(on)​): 0.044 Ω
  • Total Power Dissipation (PD​): 130W

Key Features & Benefits

  • High Voltage Rating: Safely handles up to 100V for high-voltage DC systems.
  • Low Resistance: Efficient performance reduces heat buildup during operation.
  • Fast Switching: Optimized for high-frequency pulse width modulation (PWM).

Common Applications

  • DC Motor Speed Control (24V – 48V systems).
  • Uninterruptible Power Supplies (UPS).
  • Solar Power Regulators and Converters.

IRF540N Equivalent & Substitutes

  • IRF540 (Non-N version)
  • 2N7000 (Low power only)
  • IRFB4110 (Higher power alternative)

Related Tutorials on elxhub

Conclusion

The IRF540N is a high-voltage workhorse that provides the necessary headroom for projects exceeding the standard 60V limit while maintaining the efficiency expected of a modern power MOSFET.

Download the MOSFET Datasheet pdf

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