The IRF5210 is a high-performance P-channel MOSFET designed for “High-Side” switching. In this configuration, the MOSFET is placed between the positive power rail and the load, allowing for simplified power management in battery-operated systems.
Table of Contents
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IRF5210 Pinout (TO-220)
| Pin Number | Terminal Name | Description |
| 1 | Gate (G) | Switch is ON when Gate voltage is lower than Source. |
| 2 | Drain (D) | Connected to the positive side of the load. |
| 3 | Source (S) | Connected directly to the positive supply voltage. |
Technical Specifications
- Max Drain-Source Voltage (VDS): -100V
- Max Continuous Drain Current (ID): -40A
- Gate Threshold Voltage (VGS(th)): -2.0V to -4.0V
- On-Resistance (RDS(on)): 0.060 Ω
- Total Power Dissipation (PD): 200W
Key Features & Benefits
- Simplified High-Side Control: Reduces component count in P-channel circuits.
- Low On-Resistance: High efficiency for a P-channel power device.
- Avalanche Rated: Designed to survive voltage spikes during switching.
Common Applications
- Reverse battery protection circuits.
- Automotive high-side load switching.
- DC-AC inverter power stages.
IRF5210 Equivalent & Substitutes
- IRF9540
- SUP90P06
- NDP6020P
Related Tutorials on elxhub
- Master Selection: Need help choosing? See our Ultimate MOSFET Selection Guide.
- Signal Shifting: Learn how to bridge logic levels in our Logic Level Shifter Tutorial.
- Basics: Learn more in Transistors – Basics, Types, and Working.
Conclusion
For heavy-duty high-side switching, the IRF5210 provides the necessary current and voltage headroom to handle demanding power management tasks.
Download the MOSFET Datasheet pdf
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